PE60P50 - P-Channel Enhancement Mode Power MOSFET

Description

The PE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

VDS =-60V,ID =-50A RDS(ON).

semi one

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Datasheet Details

Part number	PE60P50
Manufacturer	semi one
File Size	768.70 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE60P50 Datasheet
Additional preview pages of the PE60P50 datasheet.

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Full PDF Text Transcription

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PE60P50 P-Channel Enhancement Mode Power MOSFET Description The PE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Published: Dec 3, 2018 |