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QPM0106 - 35W GaN Power Amplifier

Datasheet Summary

Description

Data Sheet Rev.

6.0 GHz 35 W GaN Power Amplifier Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 40 V Gate Volta

Features

  • Frequency Range: 1.
  • 6 GHz.
  • PSAT : 45.4 dBm (PIN = 23 dBm).
  • PAE: 41% (PIN = 23 dBm).
  • Power Gain: 22.4 dB (PIN = 23 dBm).
  • Small Signal Gain: 30.2 dB.
  • Bias: VD = 24 V, IDQ = 2044 mA.
  • Package Dimensions: 15.24 x 15.24 x 3.51 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

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Datasheet Details

Part number QPM0106
Manufacturer qorvo
File Size 655.71 KB
Description 35W GaN Power Amplifier
Datasheet download datasheet QPM0106 Datasheet
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QPM0106 ® 1.0 – 6.0 GHz 35 W GaN Power Amplifier Product Overview Qorvo’s QPM0106 is a packaged, high power amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0 – 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency. The QPM0106 is packaged in a 10-lead 15.24 x 15.24 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The QPM0106 is ideally suited for both commercial and military EW and radar systems, communications systems, and test instrumentation. RoHS compliant.
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