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NPN Epitaxial Silicon Transistor
KSD882
Recommended Applications
• Audio Frequency Power Amplifier
Features
• Low Speed Switching • Complement to KSB772
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1)
Symbol
Parameter
BVCBO BVCEO BVEBO
IC ICP IB PD
Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current (DC) Collector Current (Pulse) (Note 2) Base Current Total Device Dissipation, TC = 25°C
TA = 25°C
TJ, TSTG Junction and Storage Temperature
Ratings 40 30 5 3 7 0.6 10 1
−55 ~ +150
Units V V V A A A W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
KSD882 Datasheet
