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PSMN2R0-55YLH - N-channel MOSFET

Datasheet Summary

Description

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package.

Features

  • 200 A continuous current capability.
  • Optimised for 36 V (nominal) battery powered.

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Datasheet Details

Part number PSMN2R0-55YLH
Manufacturer nexperia
File Size 295.44 KB
Description N-channel MOSFET
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Full PDF Text Transcription

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PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E 11 July 2022 Product data sheet 1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
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