PSC20120J Datasheet PDF - nexperia 1200V 20A SiC Schottky diode Specs

PSC20120J - 1200V 20A SiC Schottky diode

Datasheet Summary

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Features

Zero forward and reverse recovery.
Temperature independent fast and smooth switching performance.
Outstanding figure of merit (Qc x VF).
High IFSM capability.
High power density.
Reduced system costs.
System miniaturization.
Reduced EMI 3.

Datasheet Details

Part number	PSC20120J
Manufacturer	nexperia
File Size	247.59 KB
Description	1200V 20A SiC Schottky diode
Datasheet	PSC20120J Datasheet
Additional preview pages of the PSC20120J datasheet.

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Full PDF Text Transcription

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PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.

Published: Aug 14, 2025 |