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PMZB220VPE - 12V P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection typically > 2 kV.
  • Ultra thin package profile of 0.37 mm 3.

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Datasheet Details

Part number PMZB220VPE
Manufacturer nexperia
File Size 277.03 KB
Description 12V P-channel Trench MOSFET
Datasheet download datasheet PMZB220VPE Datasheet

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Full PDF Text Transcription

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PMZB220VPE 12 V, P-channel Trench MOSFET 16 June 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection typically > 2 kV • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.
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