PMZB220VPE
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Very low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection typically > 2 k V
- Ultra thin package profile of 0.37 mm
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- -
-12 V
VGS gate-source voltage
-6
- 6
ID drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
- -
-1.2 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C resistance
VGS = -1.8 V; ID = -0.1 A; Tj = 25 °C
- 300 355 mΩ
- 540 820 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated...
