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PMT280ENEA - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription

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PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.
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