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PMH950UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm 3.

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Datasheet Details

Part number PMH950UPE
Manufacturer nexperia
File Size 271.08 KB
Description P-channel MOSFET
Datasheet download datasheet PMH950UPE Datasheet
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PMH950UPE 20 V, P-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.
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