PMEG200G30ELP - 200V 3A Silicon Germanium rectifier

Product Overview

nexperia

Part number	PMEG200G30ELP
Manufacturer	nexperia
File Size	239.30 KB
Description	200V 3A Silicon Germanium rectifier
Datasheet	PMEG200G30ELP Datasheet
Additional preview pages of the PMEG200G30ELP datasheet.

Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead SurfaceMounted Device (SMD) plastic package.

Features.
Low forward voltage and low Qrr.
Extremely low leakage current.
Thermal stability up to 175 °C junction temperature.
Fast and smooth switching.
Low parasitic capacitance.
AEC-Q101 qualified Benefits.
Excellent efficiency.
Extraordinary safe operating area.
Minimal impact on Electro-Magnetic Compatibility (EMC) allowing simplified certification 3.

📁 Similar Datasheet

PMEG2002AESF - 0.2 A low VF MEGA Schottky barrier rectifier (NXP)
PMEG2005AEA - Very low VF MEGA Schottky barrier rectifiers (Philips)
PMEG2005AEL - RECTIFIER DIODE (NXP)
PMEG2005AEV - (PMEGx005AEV) Very low VF MEGA Schottky barrier rectifiers (NXP Semiconductors)
PMEG2005CT - dual MEGA Schottky barrier rectifier (NXP)
PMEG2005EB - Low VF MEGA Schottky barrier diode (Philips)
PMEG2005EH - 0.5 A very low VF MEGA Schottky barrier rectifiers (NXP Semiconductors)
PMEG2005EJ - 0.5 A very low VF MEGA Schottky barrier rectifiers (NXP Semiconductors)

Other Datasheets by nexperia

Published: Nov 15, 2025 |