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PMCM950ENE
60 V, N-channel Trench MOSFET
13 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1.
PMCM950ENE Datasheet
