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PHB33NQ20T
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC primary side switching
1.4 Quick reference data
Table 1.
PHB33NQ20T Datasheet
