PBSS4130QA-Q
description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP plement: PBSS5130QA-Q.
2. Features and benefits
- Very Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain h FE at high IC
- High energy efficiency due to less heat generation
- Reduced Printed-Circuit Board (PCB) area requirments
- Solderable side pads
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = 1 A; IB = 0.1 A; pulsed; tp ≤...
