PBSS4021PZ - PNP transistor

Nexperia

Datasheet Details

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4021NZ.

1.2

PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev.

01 — 31 March 2010 Product data sheet 1.

Product profile 1.

Very low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain (hFE) at high IC.
High energy efficiency due to less heat generation.
AEC-Q101 qualified.
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

Part Number	Description	Manufacturer
PBSS4021PZ	6.6 A PNP low VCEsat (BISS) transistor	NXP
PBSS4021PX	6.2 A PNP low VCEsat (BISS) transistor	NXP
PBSS4021NX	7 A PNP low VCEsat (BISS) transistor	NXP
PBSS4021NZ	8 A NPN low VCEsat (BISS) transistor	NXP