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NX3008PBKMB
30 V, single P-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with 0.37 mm height
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1.
NX3008PBKMB Datasheet
