NX2301P - P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

1.8 V RDSon rated for Low Voltage Gate Drive.
Very fast switching.
Trench MOSFET technology.
AEC-Q101 qualified 1.3.

nexperia

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Datasheet Details

Part number	NX2301P
Manufacturer	nexperia
File Size	712.65 KB
Description	P-channel MOSFET
Datasheet	NX2301P Datasheet
Additional preview pages of the NX2301P datasheet.

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Full PDF Text Transcription

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NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1.

Published: Jul 3, 2019 |