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NSF040120T2A1 - N-channel SiC MOSFET

Datasheet Summary

Description

The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology.

Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin 3.

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Datasheet preview – NSF040120T2A1

Datasheet Details

Part number NSF040120T2A1
Manufacturer nexperia
File Size 1.37 MB
Description N-channel SiC MOSFET
Datasheet download datasheet NSF040120T2A1 Datasheet
Additional preview pages of the NSF040120T2A1 datasheet.

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Full PDF Text Transcription

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X.PAK NSF040120T2A1 1200 V, 40 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1. General description The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives. 2.
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