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NGW50T65H3DFP - 50A high speed trench field-stop IGBT

Datasheet Summary

Description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses.

Features

  • Collector current (IC) rated at 50 A.
  • Low conduction and switching losses.
  • Stable and tight parameters for easy parellel operation.
  • Maximum junction temperature of 175 °C.
  • Fully rated as a soft fast reverse recovery diode.
  • RoHS compliant, lead-free plating 3.

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Datasheet Details

Part number NGW50T65H3DFP
Manufacturer nexperia
File Size 362.61 KB
Description 50A high speed trench field-stop IGBT
Datasheet download datasheet NGW50T65H3DFP Datasheet
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TO-247-3 NGW50T65H3DFP 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. General description The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. 2.
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