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BUK9Y19-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 29 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175 °C rated Q101 compliant
Logic level compatible Very low on-state resistance
1.3 Applications
12 V and 24 V loads General purpose power switching
Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
BUK9Y19-55B Datasheet
