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BUK9Y14-40B - N-channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Q101 compliant.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet preview – BUK9Y14-40B

Datasheet Details

Part number BUK9Y14-40B
Manufacturer nexperia
File Size 735.75 KB
Description N-channel MOSFET
Datasheet download datasheet BUK9Y14-40B Datasheet
Additional preview pages of the BUK9Y14-40B datasheet.

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Full PDF Text Transcription

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BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Q101 compliant „ Suitable for thermally demanding environments due to 175 °C rating 1.
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