BUK9K35-60RA Datasheet Text
Dual N-channel 60 V, 35 mOhm logic level MOSFET in
LFPAK56D using Repetitive Avalanche technology
2 December 2020
Product data sheet
1. General description
Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.
2. Features and benefits
- Fully automotive qualified to AEC-Q101 at 175 °C
- Repetitive Avalanche rated to 30 °C Tj rise:
- Tested to 1 Bn avalanche events
- LFPAK copper clip package technology:
- High robustness and reliability
- Gull wing leads for high manufacturability and AOI
3. Applications
- 12 V, 24 V and 48 V automotive systems
- Repetitive avalanche topologies
- Engine control
- Transmission control
- Actuator and auxiliary loads
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 15 resistance...
