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BUK9K13-60RA - Dual N-channel MOSFET

Datasheet Summary

Description

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology.

This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.

2.

Features

  • Fully automotive qualified to AEC-Q101 at 175 °C.
  • Repetitive Avalanche rated to 30 °C Tj rise:.
  • Tested to 1 Bn avalanche events.
  • LFPAK copper clip package technology:.
  • High robustness and reliability.
  • Gull wing leads for high manufacturability and AOI 3.

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Datasheet preview – BUK9K13-60RA

Datasheet Details

Part number BUK9K13-60RA
Manufacturer nexperia
File Size 291.81 KB
Description Dual N-channel MOSFET
Datasheet download datasheet BUK9K13-60RA Datasheet
Additional preview pages of the BUK9K13-60RA datasheet.

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Full PDF Text Transcription

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BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology 2 December 2020 Product data sheet 1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise: • Tested to 1 Bn avalanche events • LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI 3.
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