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BUK9675-100A
N-channel TrenchMOS logic level FET
18 August 2015
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant • Low conduction losses due to low on-state resistance
3. Applications
• Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 100 V
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
- - 23 A
Ptot total power dissipation Tmb = 25 °C; Fig.
BUK9675-100A Datasheet
