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BUK9612-55B - N-channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription for BUK9612-55B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9612-55B. For precise diagrams, and layout, please refer to the original PDF.

BUK9612-55B N-channel TrenchMOS logic level FET Rev. 02 — 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode...

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profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference d

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NXP Logo BUK9612-55B logic level FET NXP

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