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BUK9217-75B - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 185 °C rating 1.3.

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Datasheet Details

Part number BUK9217-75B
Manufacturer Nexperia
File Size 821.03 KB
Description N-channel TrenchMOS logic level FET
Datasheet download datasheet BUK9217-75B Datasheet

Full PDF Text Transcription for BUK9217-75B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9217-75B. For precise diagrams, and layout, please refer to the original PDF.

BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement ...

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uct profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 185 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Qui