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BUK7K3R7-40N - Dual N-channel 40V MOSFET

Description

Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package.

Features

  • Dual MOSFET.
  • two silicon dies in one LFPAK56D package for significant space saving.
  • Fully automotive qualified to AEC-Q101:.
  • 175 °C rating suitable for thermally demanding environments.
  • Trench 15 e-TBO technology:.
  • Merging benefits of superjunction technology (high ruggedness) and split-gate technology (low RDSon).
  • Fast and efficient switching with high damping and low spiking.
  • Tight VGS(th) limits enable easy paralleling o.

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Full PDF Text Transcription

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BUK7K3R7-40N Dual N-channel 40 V, 3.7 mOhm standard level MOSFET in LFPAK56D 3 March 2025 Product data sheet 1. General description Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2.
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