Datasheet4U Logo Datasheet4U.com

BCW68G - PNP Transistor

This page provides the datasheet information for the BCW68G, a member of the BCW68 PNP Transistor family.

Description

PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features

  • High current.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – BCW68G

Datasheet Details

Part number BCW68G
Manufacturer nexperia
File Size 259.47 KB
Description PNP Transistor
Datasheet download datasheet BCW68G Datasheet
Additional preview pages of the BCW68G datasheet.

📁 Similar Datasheet

  • BCW68G - PNP Amplifier (GME)
  • BCW68G - PNP Transistor (Infineon)
  • BCW68G - PNP Amplifier (Fairchild Semiconductor)
  • BCW68G - PNP Transistor (Micro Commercial Components)
  • BCW68G - Transistor (Motorola)
  • BCW68G - PNP Transistor (Multicomp)
  • BCW68G - SILICON PNP TRANSISTORS (Central Semiconductor)
  • BCW68G - Transistor (CDIL)
  • BCW68G - PNP Transistor (SeCoS)
  • BCW68G - PNP Transistor (SEMTECH)
Other Datasheets by nexperia
  • BCW68 - PNP Transistor
  • BCW68F - PNP Transistor
  • BCW68H - PNP Transistor
  • BCW66 - 800mA NPN general-purpose transistor
  • BCW66F - 800mA NPN general-purpose transistor
  • BCW66G - 800mA NPN general-purpose transistor
  • BCW66H - 800mA NPN general-purpose transistor
  • BCW69 - PNP general purpose transistors

Full PDF Text Transcription

Click to expand full text
BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 — 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current peak collector current DC current gain BCW68F BCW68G BCW68H Conditions open base single pulse; tp ≤ 1 ms VCE = -1 V; IC = -100 mA; Tamb = 25 °C [1] [1] pulsed: tp ≤ 300 μs, δ ≤ 0.
Published: |