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BAT54GW
30 V, 200 mA Schottky barrier diodes
24 November 2016
Product data sheet
1. General description
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Low forward voltage: VF ≤ 400 mV • Low leakage current: IR ≤ 2 µA • Reverse voltage VR ≤ 30 V • Low capacitance • Small SMD plastic package • AEC-Q101 qualified
3. Applications
• Ultra high-speed switching • Line termination
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IF forward current
VF forward voltage
IR reverse current VR reverse voltage
Conditions
Min Typ Max Unit
Tj = 25 °C
- - 200 mA
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.
BAT54GW Datasheet
