BAS316
description
High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- High switching speed: trr ≤ 4 ns
- Low capacitance
- Low leakage current
- Reverse voltage: VR ≤ 100 V
- Repetitive peak reverse voltage: VRRM ≤ 100 V
3. Applications
- High-speed switching
- General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
VR reverse voltage
IR reverse current trr reverse recovery time
Conditions
VR = 80 V; Tamb = 25 °C IF = 10 m A; IR = 10 m A; RL = 100 Ω; IR(meas) = 1 m A; Tamb = 25 °C
Min Typ Max Unit
- -
100 V
- -
0.5 µA
- -
4 ns
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
A1 anode (diode 1)
2 n.c. not connected
K cathode
Simplified...
