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BAS16
High-speed switching diode
1 October 2022
Product data sheet
1. General description
High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak reverse voltage: VRRM ≤ 100 V
3. Applications
• High-speed switching • General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
VR
reverse voltage
IR
reverse current
trr
reverse recovery time
Conditions
VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C
Min Typ Max Unit
-
-
100 V
-
-
0.5 µA
-
-
4
ns
5. Pinning information
Table 2.