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74AHC30BQ - 8-input NAND gate

Download the 74AHC30BQ datasheet PDF. This datasheet also covers the 74AHC30 variant, as both devices belong to the same 8-input nand gate family and are provided as variant models within a single manufacturer datasheet.

Description

The 74AHC30; 74AHCT30 is a high-speed Si-gate CMOS device and is pin compatible with Lowpower Schottky TTL (LSTTL).

It is specified in compliance with JEDEC standard No.

7-A.

Features

  • Balanced propagation delays.
  • All inputs have Schmitt-trigger actions.
  • Inputs accept voltages higher than VCC.
  • Input levels:.
  • For 74AHC30: CMOS level.
  • For 74AHCT30: TTL level.
  • ESD protection:.
  • HBM JESD22-A114E exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101C exceeds 1000 V.
  • Multiple package options.
  • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Ordering informat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (74AHC30-nexperia.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Nexperia

Part Number Description
74AHC30 8-input NAND gate
74AHC30-Q100 8-input NAND gate
74AHC30D 8-input NAND gate
74AHC30GU12 8-input NAND gate
74AHC30PW 8-input NAND gate

Full PDF Text Transcription

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74AHC30; 74AHCT30 8-input NAND gate Rev. 5 — 6 May 2020 Product data sheet 1. General description The 74AHC30; 74AHCT30 is a high-speed Si-gate CMOS device and is pin compatible with Lowpower Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. 7-A. The 74AHC30; 74AHCT30 provides an 8-input NAND function. 2. Features and benefits • Balanced propagation delays • All inputs have Schmitt-trigger actions • Inputs accept voltages higher than VCC • Input levels: • For 74AHC30: CMOS level • For 74AHCT30: TTL level • ESD protection: • HBM JESD22-A114E exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • CDM JESD22-C101C exceeds 1000 V • Multiple package options • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Ordering information Table 1.
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