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NP8N06 - 60V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP8N06 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Features

  • S.
  • VDS =60V ID =8A RDS(ON)(Typ. )=15mΩ @VGS=10V RDS(ON)(Typ. )=16.5mΩ @VGS=4.5V.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – NP8N06

Datasheet Details

Part number NP8N06
Manufacturer natLinear
File Size 844.41 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP8N06 Datasheet
Additional preview pages of the NP8N06 datasheet.

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    60V N-Channel Enhancement Mode MOSFET NP8N06 Description Schematic diagram The NP8N06 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. D G General Features S  VDS =60V ID =8A RDS(ON)(Typ.)=15mΩ @VGS=10V RDS(ON)(Typ.)=16.5mΩ @VGS=4.
    Published: |