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NP6884D6 - 40V Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6884D6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Features

  • VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet preview – NP6884D6

Datasheet Details

Part number NP6884D6
Manufacturer natLinear
File Size 673.62 KB
Description 40V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6884D6 Datasheet
Additional preview pages of the NP6884D6 datasheet.

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NP6884D6 40V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6884D6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features  VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.
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