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NP4P06MR-M - 60V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in load switch and battery protection applications.

Features

  • VDS =-60V，ID =-4A RDS(ON)(Typ. )=91mΩ @VGS=-10V RDS(ON)(Typ. )=101mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet preview – NP4P06MR-M

Datasheet Details

Part number NP4P06MR-M
Manufacturer natLinear
File Size 602.74 KB
Description 60V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4P06MR-M Datasheet
Additional preview pages of the NP4P06MR-M datasheet.

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NP4P06MR-M 60V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features  VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.
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