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NP4N65G - 650V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =650V，ID =4A RDS(ON)(Typ. )= 2.49Ω @VGS=10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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Datasheet preview – NP4N65G

Datasheet Details

Part number NP4N65G
Manufacturer natLinear
File Size 573.89 KB
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4N65G Datasheet
Additional preview pages of the NP4N65G datasheet.

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Full PDF Text Transcription

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NP4N65G 650V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features  VDS =650V，ID =4A RDS(ON)(Typ.)= 2.
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