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NP4606G - 30V N And P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NP4606G
Manufacturer natLinear
File Size 450.07 KB
Description 30V N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4606G Datasheet
Additional preview pages of the NP4606G datasheet.

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NP4606G 30V N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. D1/D2 General Features  N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.
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