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NP4406SR-J - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP4406SR-J uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Features

  • VDS =30V，ID =13A RDS(ON)(Typ. )=8mΩ @VGS=10V RDS(ON)(Typ. )=11mΩ @VGS=4.5V.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment SOP-8.

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Datasheet preview – NP4406SR-J

Datasheet Details

Part number NP4406SR-J
Manufacturer natLinear
File Size 942.06 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4406SR-J Datasheet
Additional preview pages of the NP4406SR-J datasheet.

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NP4406SR-J 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4406SR-J uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. General Features  VDS =30V，ID =13A RDS(ON)(Typ.)=8mΩ @VGS=10V RDS(ON)(Typ.)=11mΩ @VGS=4.
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