NP35S03QR Datasheet PDF - natlinear 30V N-Channel Enhancement Mode MOSFET Specs

NP35S03QR - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

Datasheet Details

Part number	NP35S03QR
Manufacturer	natLinear
File Size	500.21 KB
Description	30V N-Channel Enhancement Mode MOSFET
Datasheet	NP35S03QR Datasheet
Additional preview pages of the NP35S03QR datasheet.

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Full PDF Text Transcription

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NP35S03QR 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S General Features  VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.

Published: Jul 23, 2024 |