Datasheet4U Logo Datasheet4U.com

NP3416BEMR - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP3416BEMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =20V，ID =4A RDS(ON)(Typ. )=18.5mΩ @VGS=4.5V RDS(ON)(Typ. )=23.3mΩ @VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD Rating: 2500V HBM Marking and pin assignment.

📥 Download Datasheet

Datasheet preview – NP3416BEMR

Datasheet Details

Part number NP3416BEMR
Manufacturer natLinear
File Size 623.18 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3416BEMR Datasheet
Additional preview pages of the NP3416BEMR datasheet.

📁 Similar Datasheet

Other Datasheets by natlinear
  • NP3400MR-S - N-Channel Enhancement Mode MOSFET
  • NP3401MR-M - 30V P-Channel Enhancement Mode MOSFET
  • NP3401VR - 30V P-Channel Enhancement Mode MOSFET
  • NP3404VR - 30V N-Channel Enhancement Mode MOSFET
  • NP3407VR - 30V P-Channel Enhancement Mode MOSFET
  • NP3409MR - 30V P-Channel Enhancement Mode MOSFET
  • NP3007DR - 30V P-Channel Enhancement Mode MOSFET
  • NP3065D6 - 30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
NP3416BEMR 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3416BEMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.
Published: |