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NP2N11MR - 100V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =110V，ID =2A RDS(ON)(Typ. )=220mΩ @VGS=10V RDS(ON)(Typ. )=240mΩ @VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – NP2N11MR

Datasheet Details

Part number NP2N11MR
Manufacturer natLinear
File Size 0.97 MB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP2N11MR Datasheet
Additional preview pages of the NP2N11MR datasheet.

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NP2N11MR 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.
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