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50N30 - N-Channel Power MOSFET

General Description

The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max.

threshold voltage of 6.5 volts.

Key Features

  • RDS(ON) = 0.080Ω @ VGS = 10V Ultra low gate charge(65nC typical) Low reverse transfer capacitance (C RSS = 60pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source).

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Other Datasheets by Nell Power Semiconductor

Part Number Description
50N30C N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, battery chargers, DC choppers, temperature and lighting controls and general purpose switching applications. G D S TO-247AB (50N30C) D (Drain) FEATURES RDS(ON) = 0.