MX2012E
DESCRIPTION
The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
GENERAL FEATURES
- VDS=20V, ID=8A
RDS(ON)(Typ.)=8.5mΩ @ VGS=4.5V
RDS(ON)(Typ.)=10mΩ @ VGS=2.5V
- Surface-mounted package
- Advanced trench cell design
- Extremely low threshold voltage
- ESD protected (HBM>2KV)
APPLICATION
- Portable appliances
- Battery management
PINOUT
Schematic diagram
Pin Assignment & Top View TSSOP-8
ORDERING INFORMATION
Part Number MX2012E
Storage Temperature -55°C to 150°C
Pin 1 2,3 4 5 6,7 8
Package TSSOP-8
Description
Drain(D)
Source(S1) Gate(G1) Gate(G2) Source(S2) Drain(D) Symbol
Devices Per Reel
- ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(VGS=4.5V)(Note1) Drain Current-Continuous(VGS=4.5V,TA=100°C)(Note1) Pulsed Drain Current(VGS=4.5V)(Note1)(Note2) Total Power Dissipation Diode...
