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MX2012E - Dual N-Channel Enhancement Mode Power MOSFET

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MX2012E Dual N-Channel Enhancement Mode Power MOSFET by imosemi - Datasheet Preview — Datasheet preview – MX2012E

Datasheet Details

Part number	MX2012E
Manufacturer	imosemi
File Size	449.02 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MX2012E Datasheet
Additional preview pages of the MX2012E datasheet.

Product details

Description

The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

VDS=20V, ID=8A RDS(ON)(Typ. )=8.5mΩ @ VGS=4.5V RDS(ON)(Typ. )=10mΩ @ VGS=2.5V.
Surface-mounted package.
Advanced trench cell design.
Extremely low threshold voltage.
ESD protected (HBM>2KV).

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Published: Jul 22, 2025 |