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TPS7H2201-SP - eFuse

General Description

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection.

The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A.

Key Features

  • Standard micro circuit available, SMD 5962R17220.
  • Vendor item drawing available, VID V62/23608.
  • Radiation performance:.
  • Radiation hardness assurance (RHA) up to TID 100 krad(Si).
  • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg.
  • SEFI/SET characterized to LET = 75 MeV-cm2/mg.
  • Integrated single channel eFuse.
  • Input voltage range: 1.5 V to 7 V.

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Other Datasheets by Texas Instruments

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS7H2201-SP, TPS7H2201-SEP SLVSDO0C – SEPTEMBER 2018 – REVISED JUNE 2023 TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single channel eFuse • Input voltage range: 1.5 V to 7 V • Low on-resistance (RON) of : – 35-mΩ maximum at 25°C and VIN = 5 V for CFP and KGD – 21.