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SN7489 - 64-BIT RANDOM-ACCESS READ/WRITE MEMORY

General Description

This 64-bit active-element memory is a monolithic, high-speed, transistor-transistor logic (TTL) array of 64 flip-flop memory cells organized in a matrix to provide 16 words of four bits each.

Each of the 16 words is addressed in straight binary with full on-chip decoding.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SN7489 64-BIT RANDOM-ACCESS READ/WRITE MEMORY • For Application as a"Scratch Pad" Memory with Nondestructive Read-Out • Fully Decoded Memory Organized as 16 Words of Four Bits Each • Fast Access Time . . . 3 3 ns Typical • Diode-Clamped, Buffered Inputs • Open-Collector Outputs Provide Wire-AND Capability • Typical Power Dissipation . . . 3 7 5 mW • Compatible with Most TTL Circuits description This 64-bit active-element memory is a monolithic, high-speed, transistor-transistor logic (TTL) array of 64 flip-flop memory cells organized in a matrix to provide 16 words of four bits each. Each of the 16 words is addressed in straight binary with full on-chip decoding.