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• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• High-Impedance State During Power Up
and Power Down
• 3-State True Outputs Drive Bus Lines or
Buffer-Memory Address Registers
• P-N-P Inputs Reduce DC Loading • Package Options Include Plastic
Small-Outline (D) Packages and Standard
Plastic 300-mil DIPs (P)
SN64BCT306 DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
SCBS048B – MARCH 1990 – REVISED NOVEMBER 1993
D OR P PACKAGE (TOP VIEW)
1OE
VCC 2OE
2A
1 2 3 4
8 2Y 7 1A 6 GND 5 1Y
description
This dual buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers
SN64BCT306 Datasheet
