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• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• 3-State Outputs Drive Bus Lines or Buffer
Memory Address Registers
• P-N-P Inputs Reduce DC Loading • Flow-Through Architecture Optimizes
PCB Layout
• Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
description
These 10-bit buffers and bus drivers provide high-performance bus interface for wide data paths or buses carrying parity.
SN54BCT29827B Datasheet
