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• BiCMOS Design Substantially Reduces ICCZ • Output Ports Have Equivalent 25-Ω
Resistors; No External Resistors Are Required
• Specifically Designed to Drive MOS DRAMs • 3-State Outputs Drive Bus Lines or Buffer
Memory Address Registers
• Flow-Through Architecture Optimizes
PCB Layout
• Power-Up High-Impedance State • ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015
• Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
description
These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.
SN54BCT2827C Datasheet
