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SMV512K32-SP - 16-Mb RADIATION-HARDENED SRAM

Description

The SMV512K32 is a high performance asynchronous CMOS SRAM organized as 524,288 words by 32 bits.

It is pin selectable between two modes: master or slave.

The master device selection provides user defined autonomous EDAC scrubbing options.

Features

  • 1.
  • 20-ns Read, 13.8-ns Write Through Maximum Access Time.
  • Functionally Compatible With Commercial 512K x 32 SRAM Devices.
  • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors.
  • Built-In Scrub Engine for Autonomous Correction.
  • CMOS Compatible Input and Output Level, Three State Bidirectional Data Bus.
  • 3.3 ±0.3-V I/O, 1.8 ±0.15-V CORE.
  • Radiation Performance (1).
  • Uses Both Substrate Engineering and Radiation H.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMV512K32-SP www.ti.com SLVSA21I – JUNE 2011 – REVISED JANUARY 2014 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • 20-ns Read, 13.8-ns Write Through Maximum Access Time • Functionally Compatible With Commercial 512K x 32 SRAM Devices • Built-In EDAC (Error Detection and Correction) to Mitigate Soft Errors • Built-In Scrub Engine for Autonomous Correction • CMOS Compatible Input and Output Level, Three State Bidirectional Data Bus – 3.3 ±0.3-V I/O, 1.8 ±0.
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