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LF353-N - Wide Bandwidth Dual JFET Input Operational Amplifier

Description

These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II technology).

They require low supply current yet maintain a large gain bandwidth product and fast slew rate.

Features

  • 1.
  • 2 Internally Trimmed Offset Voltage: 10 mV.
  • Low Input Bias Current: 50pA.
  • Low Input Noise Voltage: 25 nV/√Hz.
  • Low Input Noise Current: 0.01 pA/√Hz.
  • Wide Gain Bandwidth: 4 MHz.
  • High Slew Rate: 13 V/μs.
  • Low Supply Current: 3.6 mA.
  • High Input Impedance: 1012Ω.
  • Low Total Harmonic Distortion : ≤0.02%.
  • Low 1/f Noise Corner: 50 Hz.
  • Fast Settling Time to 0.01%: 2 μs.

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Other Datasheets by Texas Instruments

Part Number Description
LF353 Wide-Bandwidth JFET-Input Dual Operational Amplifier
LF353D Wide-Bandwidth JFET-Input Dual Operational Amplifier
LF353M Wide Bandwidth Dual JFET Input Operational Amplifier
LF353N Wide Bandwidth Dual JFET Input Operational Amplifier
LF353P Wide-Bandwidth JFET-Input Dual Operational Amplifier

Full PDF Text Transcription

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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier Check for Samples: LF353-N FEATURES 1 •2 Internally Trimmed Offset Voltage: 10 mV • Low Input Bias Current: 50pA • Low Input Noise Voltage: 25 nV/√Hz • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 4 MHz • High Slew Rate: 13 V/μs • Low Supply Current: 3.6 mA • High Input Impedance: 1012Ω • Low Total Harmonic Distortion : ≤0.02% • Low 1/f Noise Corner: 50 Hz • Fast Settling Time to 0.01%: 2 μs DESCRIPTION These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate.
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