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ISO5852S-Q1 - High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver

Description

The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current.

The input side operates from a single 2.25-V to 5.5-V supply.

Features

  • 1 Features.
  • 1 Qualified for Automotive.

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Datasheet preview – ISO5852S-Q1

Datasheet Details

Part number ISO5852S-Q1
Manufacturer Texas Instruments
File Size 1.63 MB
Description High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver
Datasheet download datasheet ISO5852S-Q1 Datasheet
Additional preview pages of the ISO5852S-Q1 datasheet.

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Full PDF Text Transcription

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community ISO5852S-Q1 SLLSEQ2A – SEPTEMBER 2016 – REVISED DECEMBER 2016 ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features 1 Features •1 Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V • Split Outputs to Provide 2.
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