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CSD19538Q3A - 100V N-Channel Power MOSFET

Description

This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

Features

  • Ultra-low Qg and Qgd.
  • Low-thermal resistance.
  • Avalanche rated.
  • Lead free.
  • RoHS compliant.
  • Halogen free.
  • SON 3.3mm × 3.3mm plastic package 2.

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Full PDF Text Transcription

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TI Information - Selective Disclosure CSD19538Q3A SLPS583B – MAY 2016 – REVISED OCTOBER 2025 CSD19538Q3A 100V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Lead free • RoHS compliant • Halogen free • SON 3.3mm × 3.3mm plastic package 2 Applications • Power over Ethernet (PoE) • Power sourcing equipment (PSE) • Motor control 3 Description This 100V, 49mΩ, SON 3.3mm × 3.3mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
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